Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices

Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices

In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnet...

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Bibliographic Details
Main Authors: Gordo, V. Orsi, Gobato, Y.G., Galeti, H.V.A., Brasil, M.J.S.P., Taylor, David, Henini, M.
Format: Article
Published: Springer 2017
Subjects:
Quantum rings
photoluminescence
spin polarization
resonant tunneling
Online Access:https://eprints.nottingham.ac.uk/41566/

Internet

https://eprints.nottingham.ac.uk/41566/

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