Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnet...
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Bibliographic Details
| Main Authors: |
Gordo, V. Orsi,
Gobato, Y.G.,
Galeti, H.V.A.,
Brasil, M.J.S.P.,
Taylor, David,
Henini, M. |
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| Format: | Article
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| Published: |
Springer
2017
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| Subjects: | |
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| Online Access: | https://eprints.nottingham.ac.uk/41566/
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