Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction

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Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μm at low t...

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Bibliographic Details
Main Authors:	Nádvornik, L., Olejnik, K., Němec, P., Novák, V., Janda, T., Wunderlich, J., Trojánek, F., Jungwirth, T.
Format:	Article
Published:	American Physical Society 2016
Online Access:	https://eprints.nottingham.ac.uk/40285/

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