Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μm at low t...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Published: |
American Physical Society
2016
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| Online Access: | https://eprints.nottingham.ac.uk/40285/ |