Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μm at low t...
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| Format: | Article |
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American Physical Society
2016
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| Online Access: | https://eprints.nottingham.ac.uk/40285/ |
| _version_ | 1848796024884166656 |
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| author | Nádvornik, L. Olejnik, K. Němec, P. Novák, V. Janda, T. Wunderlich, J. Trojánek, F. Jungwirth, T. |
| author_facet | Nádvornik, L. Olejnik, K. Němec, P. Novák, V. Janda, T. Wunderlich, J. Trojánek, F. Jungwirth, T. |
| author_sort | Nádvornik, L. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μm at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p-n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p-n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p-n bias. |
| first_indexed | 2025-11-14T19:41:25Z |
| format | Article |
| id | nottingham-40285 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:41:25Z |
| publishDate | 2016 |
| publisher | American Physical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-402852020-05-04T18:07:16Z https://eprints.nottingham.ac.uk/40285/ Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction Nádvornik, L. Olejnik, K. Němec, P. Novák, V. Janda, T. Wunderlich, J. Trojánek, F. Jungwirth, T. We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μm at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p-n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p-n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p-n bias. American Physical Society 2016-08-11 Article PeerReviewed Nádvornik, L., Olejnik, K., Němec, P., Novák, V., Janda, T., Wunderlich, J., Trojánek, F. and Jungwirth, T. (2016) Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction. Physical Review B, 94 (7). 075306/1-075306/6. ISSN 2469-9969 http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.075306 doi:10.1103/PhysRevB.94.075306 doi:10.1103/PhysRevB.94.075306 |
| spellingShingle | Nádvornik, L. Olejnik, K. Němec, P. Novák, V. Janda, T. Wunderlich, J. Trojánek, F. Jungwirth, T. Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction |
| title | Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction |
| title_full | Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction |
| title_fullStr | Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction |
| title_full_unstemmed | Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction |
| title_short | Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction |
| title_sort | enhancement of the spin hall voltage in a reverse-biased planar p-n junction |
| url | https://eprints.nottingham.ac.uk/40285/ https://eprints.nottingham.ac.uk/40285/ https://eprints.nottingham.ac.uk/40285/ |