SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes

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SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes

Electrical properties of ZnO/SiC Schottky diodes with two SiC polytypes and N and P doping are investigated. Characterization was performed through I–V and C–V–f measurements. Schottky barrier height (Φb), ideality factor (n), and series resistance (Rs) were extracted from forward I–V characteristic...

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Bibliographic Details
Main Authors:	Rebaoui, Z., Bouiajra, W.B., Abboun Abid, M., Saidane, A., Jameel, D., Henini, M., Felix, J.F.
Format:	Article
Published:	Elsevier 2017
Subjects:	ZnO/SiC; SiC polytypes; I–V characteristics; C–V-f measurements; Electrical properties
Online Access:	https://eprints.nottingham.ac.uk/40161/

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