SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes
Electrical properties of ZnO/SiC Schottky diodes with two SiC polytypes and N and P doping are investigated. Characterization was performed through I–V and C–V–f measurements. Schottky barrier height (Φb), ideality factor (n), and series resistance (Rs) were extracted from forward I–V characteristic...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/40161/ |