Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19

We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline an...

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Main Authors: Beardsley, R.P., Parkes, D.E., Zemen, J., Bowe, S., Edmonds, K.W., Reardon, C., Maccherozzi, F., Isakov, I., Warburton, P.A., Campion, R.P., Gallagher, B.L., Cavill, S.A., Rushforth, A.W.
Format: Article
Published: Nature Publishing Group 2017
Online Access:https://eprints.nottingham.ac.uk/40144/
_version_ 1848795994316079104
author Beardsley, R.P.
Parkes, D.E.
Zemen, J.
Bowe, S.
Edmonds, K.W.
Reardon, C.
Maccherozzi, F.
Isakov, I.
Warburton, P.A.
Campion, R.P.
Gallagher, B.L.
Cavill, S.A.
Rushforth, A.W.
author_facet Beardsley, R.P.
Parkes, D.E.
Zemen, J.
Bowe, S.
Edmonds, K.W.
Reardon, C.
Maccherozzi, F.
Isakov, I.
Warburton, P.A.
Campion, R.P.
Gallagher, B.L.
Cavill, S.A.
Rushforth, A.W.
author_sort Beardsley, R.P.
building Nottingham Research Data Repository
collection Online Access
description We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropy to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. We investigate the competition between the strain-induced and shape-induced anisotropy energies, and the resultant stable domain configurations, as the width of the bar is reduced to the nanoscale range. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials.
first_indexed 2025-11-14T19:40:56Z
format Article
id nottingham-40144
institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T19:40:56Z
publishDate 2017
publisher Nature Publishing Group
recordtype eprints
repository_type Digital Repository
spelling nottingham-401442020-05-04T18:35:10Z https://eprints.nottingham.ac.uk/40144/ Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19 Beardsley, R.P. Parkes, D.E. Zemen, J. Bowe, S. Edmonds, K.W. Reardon, C. Maccherozzi, F. Isakov, I. Warburton, P.A. Campion, R.P. Gallagher, B.L. Cavill, S.A. Rushforth, A.W. We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropy to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. We investigate the competition between the strain-induced and shape-induced anisotropy energies, and the resultant stable domain configurations, as the width of the bar is reduced to the nanoscale range. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials. Nature Publishing Group 2017-02-10 Article PeerReviewed Beardsley, R.P., Parkes, D.E., Zemen, J., Bowe, S., Edmonds, K.W., Reardon, C., Maccherozzi, F., Isakov, I., Warburton, P.A., Campion, R.P., Gallagher, B.L., Cavill, S.A. and Rushforth, A.W. (2017) Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19. Scientific Reports, 7 (42107). pp. 1-6. ISSN 2045-2322 http://www.nature.com/articles/srep42107 doi:10.1038/srep42107 doi:10.1038/srep42107
spellingShingle Beardsley, R.P.
Parkes, D.E.
Zemen, J.
Bowe, S.
Edmonds, K.W.
Reardon, C.
Maccherozzi, F.
Isakov, I.
Warburton, P.A.
Campion, R.P.
Gallagher, B.L.
Cavill, S.A.
Rushforth, A.W.
Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
title Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
title_full Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
title_fullStr Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
title_full_unstemmed Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
title_short Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19
title_sort effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown fe81ga19
url https://eprints.nottingham.ac.uk/40144/
https://eprints.nottingham.ac.uk/40144/
https://eprints.nottingham.ac.uk/40144/