Highly-mismatched InAs/InSe heterojunction diodes
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behav...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
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American Institute of Physics
2016
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| Online Access: | https://eprints.nottingham.ac.uk/39578/ |
| _version_ | 1848795869066821632 |
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| author | Velichko, A. Kudrynskyi, Zakhar R. Di Paola, D.M. Makarovsky, Oleg Kesaria, M. Krier, A. Sandall, I.C. Tan, C.H. Kovalyuk, Zakhar D. Patanè, Amalia |
| author_facet | Velichko, A. Kudrynskyi, Zakhar R. Di Paola, D.M. Makarovsky, Oleg Kesaria, M. Krier, A. Sandall, I.C. Tan, C.H. Kovalyuk, Zakhar D. Patanè, Amalia |
| author_sort | Velichko, A. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges. |
| first_indexed | 2025-11-14T19:38:56Z |
| format | Article |
| id | nottingham-39578 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:38:56Z |
| publishDate | 2016 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-395782020-05-04T18:22:28Z https://eprints.nottingham.ac.uk/39578/ Highly-mismatched InAs/InSe heterojunction diodes Velichko, A. Kudrynskyi, Zakhar R. Di Paola, D.M. Makarovsky, Oleg Kesaria, M. Krier, A. Sandall, I.C. Tan, C.H. Kovalyuk, Zakhar D. Patanè, Amalia We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges. American Institute of Physics 2016-11-04 Article PeerReviewed Velichko, A., Kudrynskyi, Zakhar R., Di Paola, D.M., Makarovsky, Oleg, Kesaria, M., Krier, A., Sandall, I.C., Tan, C.H., Kovalyuk, Zakhar D. and Patanè, Amalia (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18). 182115/1-182115/4. ISSN 1077-3118 http://aip.scitation.org/doi/10.1063/1.4967381 doi:10.1063/1.4967381 doi:10.1063/1.4967381 |
| spellingShingle | Velichko, A. Kudrynskyi, Zakhar R. Di Paola, D.M. Makarovsky, Oleg Kesaria, M. Krier, A. Sandall, I.C. Tan, C.H. Kovalyuk, Zakhar D. Patanè, Amalia Highly-mismatched InAs/InSe heterojunction diodes |
| title | Highly-mismatched InAs/InSe heterojunction diodes |
| title_full | Highly-mismatched InAs/InSe heterojunction diodes |
| title_fullStr | Highly-mismatched InAs/InSe heterojunction diodes |
| title_full_unstemmed | Highly-mismatched InAs/InSe heterojunction diodes |
| title_short | Highly-mismatched InAs/InSe heterojunction diodes |
| title_sort | highly-mismatched inas/inse heterojunction diodes |
| url | https://eprints.nottingham.ac.uk/39578/ https://eprints.nottingham.ac.uk/39578/ https://eprints.nottingham.ac.uk/39578/ |