Highly-mismatched InAs/InSe heterojunction diodes

Highly-mismatched InAs/InSe heterojunction diodes

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behav...

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Bibliographic Details
Main Authors: Velichko, A., Kudrynskyi, Zakhar R., Di Paola, D.M., Makarovsky, Oleg, Kesaria, M., Krier, A., Sandall, I.C., Tan, C.H., Kovalyuk, Zakhar D., Patanè, Amalia
Format: Article
Published: American Institute of Physics 2016
Online Access:https://eprints.nottingham.ac.uk/39578/

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https://eprints.nottingham.ac.uk/39578/

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