Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

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Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-e...

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Bibliographic Details
Main Authors:	Eßer, F., Winner, S., Patanè, Amalia, Helm, M., Schneider, H.
Format:	Article
Published:	American Institute of Physics 2016
Online Access:	https://eprints.nottingham.ac.uk/39577/

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