Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN
We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-e...
| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2016
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| Online Access: | https://eprints.nottingham.ac.uk/39577/ |