Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN
We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-e...
| Main Authors: | , , , , |
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| Format: | Article |
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American Institute of Physics
2016
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| Online Access: | https://eprints.nottingham.ac.uk/39577/ |
| _version_ | 1848795868832989184 |
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| author | Eßer, F. Winner, S. Patanè, Amalia Helm, M. Schneider, H. |
| author_facet | Eßer, F. Winner, S. Patanè, Amalia Helm, M. Schneider, H. |
| author_sort | Eßer, F. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with an increase in the N content, in agreement with the two-level band anticrossing model. |
| first_indexed | 2025-11-14T19:38:56Z |
| format | Article |
| id | nottingham-39577 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:38:56Z |
| publishDate | 2016 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-395772020-05-04T18:22:33Z https://eprints.nottingham.ac.uk/39577/ Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN Eßer, F. Winner, S. Patanè, Amalia Helm, M. Schneider, H. We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with an increase in the N content, in agreement with the two-level band anticrossing model. American Institute of Physics 2016-11-03 Article PeerReviewed Eßer, F., Winner, S., Patanè, Amalia, Helm, M. and Schneider, H. (2016) Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN. Applied Physics Letters, 109 (18). 182113/1-182113/4. ISSN 1077-3118 http://aip.scitation.org/doi/10.1063/1.4966949 doi: 10.1063/1.4966949 doi: 10.1063/1.4966949 |
| spellingShingle | Eßer, F. Winner, S. Patanè, Amalia Helm, M. Schneider, H. Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN |
| title | Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN |
| title_full | Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN |
| title_fullStr | Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN |
| title_full_unstemmed | Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN |
| title_short | Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN |
| title_sort | excitonic mobility edge and ultra-short photoluminescence decay time in n-type gaasn |
| url | https://eprints.nottingham.ac.uk/39577/ https://eprints.nottingham.ac.uk/39577/ https://eprints.nottingham.ac.uk/39577/ |