Eßer, F., Winner, S., Patanè, A., Helm, M., & Schneider, H. (2016). Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN. American Institute of Physics.
Chicago Style (17th ed.) CitationEßer, F., S. Winner, Amalia Patanè, M. Helm, and H. Schneider. Excitonic Mobility Edge and Ultra-short Photoluminescence Decay Time in N-type GaAsN. American Institute of Physics, 2016.
MLA (9th ed.) CitationEßer, F., et al. Excitonic Mobility Edge and Ultra-short Photoluminescence Decay Time in N-type GaAsN. American Institute of Physics, 2016.
Warning: These citations may not always be 100% accurate.