X-ray detection with zinc-blende (cubic) GaN Schottky diodes
The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons...
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| Format: | Article |
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Nature Publishing Group
2016
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| Online Access: | https://eprints.nottingham.ac.uk/39471/ |
| _version_ | 1848795844297359360 |
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| author | Gohil, T. Whale, J. Lioliou, G. Novikov, Sergei V. Foxon, C.T. Kent, A.J. Barnett, A.M. |
| author_facet | Gohil, T. Whale, J. Lioliou, G. Novikov, Sergei V. Foxon, C.T. Kent, A.J. Barnett, A.M. |
| author_sort | Gohil, T. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At −5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At −5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm−2 and (189.0 ± 0.2) mA cm−2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics. |
| first_indexed | 2025-11-14T19:38:32Z |
| format | Article |
| id | nottingham-39471 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:38:32Z |
| publishDate | 2016 |
| publisher | Nature Publishing Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-394712020-05-04T18:01:53Z https://eprints.nottingham.ac.uk/39471/ X-ray detection with zinc-blende (cubic) GaN Schottky diodes Gohil, T. Whale, J. Lioliou, G. Novikov, Sergei V. Foxon, C.T. Kent, A.J. Barnett, A.M. The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At −5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At −5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm−2 and (189.0 ± 0.2) mA cm−2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics. Nature Publishing Group 2016-07-12 Article PeerReviewed Gohil, T., Whale, J., Lioliou, G., Novikov, Sergei V., Foxon, C.T., Kent, A.J. and Barnett, A.M. (2016) X-ray detection with zinc-blende (cubic) GaN Schottky diodes. Scientific Reports, 6 . 29535/1-29535/5. ISSN 2045-2322 http://www.nature.com/articles/srep29535 doi:10.1038/srep29535 doi:10.1038/srep29535 |
| spellingShingle | Gohil, T. Whale, J. Lioliou, G. Novikov, Sergei V. Foxon, C.T. Kent, A.J. Barnett, A.M. X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title | X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_full | X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_fullStr | X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_full_unstemmed | X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_short | X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_sort | x-ray detection with zinc-blende (cubic) gan schottky diodes |
| url | https://eprints.nottingham.ac.uk/39471/ https://eprints.nottingham.ac.uk/39471/ https://eprints.nottingham.ac.uk/39471/ |