Investigation of deep level defects in advanced semiconductor materials and devices

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Investigation of deep level defects in advanced semiconductor materials and devices

This thesis reports an investigation of deep level defects in narrow bandgap semiconductors, namely GaAs and GaAsN, and wide-gap GaN materials and devices that have potential applications in photovoltaics and betavoltaic microbatteries. Indeed, for such applications it is of paramount importance to...

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Bibliographic Details
Main Author:	AL Saqri, Noor alhuda Ahmed
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2017
Subjects:	DLTS GaAs GaN GaAsN IBSC
Online Access:	https://eprints.nottingham.ac.uk/39200/

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