Investigation of deep level defects in advanced semiconductor materials and devices
This thesis reports an investigation of deep level defects in narrow bandgap semiconductors, namely GaAs and GaAsN, and wide-gap GaN materials and devices that have potential applications in photovoltaics and betavoltaic microbatteries. Indeed, for such applications it is of paramount importance to...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
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2017
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| Online Access: | https://eprints.nottingham.ac.uk/39200/ |