SiC and GaN power transistors switching energy
evaluation in hard and soft switching conditions

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SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half....

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Bibliographic Details
Main Authors:	Li, Ke, Evans, Paul, Johnson, Christopher Mark
Format:	Conference or Workshop Item
Published:	2016
Subjects:	Wide bandgap power semiconductor device; GaN-HEMT; SiC-MOSFET; Switching energy; Hard switching; Soft switching
Online Access:	https://eprints.nottingham.ac.uk/38781/

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