SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half....
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/38781/ |