SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation

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SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduc...

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Bibliographic Details
Main Authors:	Li, Ke, Evans, Paul, Johnson, Christopher Mark
Format:	Conference or Workshop Item
Published:	2016
Subjects:	Wide bandgap power semiconductor device; GaN-HEMT; SiC-JFET; SiC-MOSFET; Conduction loss; Switching loss
Online Access:	https://eprints.nottingham.ac.uk/38780/

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