SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduc...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/38780/ |