Body diode reliability investigation of SiC power MOSFETs

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Body diode reliability investigation of SiC power MOSFETs

A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of rel...

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Bibliographic Details
Main Authors:	Fayyaz, A., Romano, G., Castellazzi, Alberto
Format:	Article
Published:	Elsevier 2016
Subjects:	Silicon carbide; Wide bandgap; Power MOSFET; Body diode; Reliability
Online Access:	https://eprints.nottingham.ac.uk/38669/

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