Body diode reliability investigation of SiC power MOSFETs
A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of rel...
| Main Authors: | , , |
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| Format: | Article |
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Elsevier
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/38669/ |