Body diode reliability investigation of SiC power MOSFETs
A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of rel...
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| Format: | Article |
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Elsevier
2016
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| Online Access: | https://eprints.nottingham.ac.uk/38669/ |
| _version_ | 1848795664503275520 |
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| author | Fayyaz, A. Romano, G. Castellazzi, Alberto |
| author_facet | Fayyaz, A. Romano, G. Castellazzi, Alberto |
| author_sort | Fayyaz, A. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of reliability. Recent improvements in Silicon Carbide (SiC) power MOSFET device manufacturing technology has resulted in their wider commercial availability with different voltage and current ratings and from various manufacturers. Hence, it is essential to perform characterisation of its intrinsic body diode. This paper presents the reliability assessment of body diodes of latest generation discrete SiC power MOSFETs within a 3-phase 2-level DC-to-AC inverter representing realistic operating conditions for power electronic applications. |
| first_indexed | 2025-11-14T19:35:41Z |
| format | Article |
| id | nottingham-38669 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:35:41Z |
| publishDate | 2016 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-386692020-05-04T18:08:45Z https://eprints.nottingham.ac.uk/38669/ Body diode reliability investigation of SiC power MOSFETs Fayyaz, A. Romano, G. Castellazzi, Alberto A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of reliability. Recent improvements in Silicon Carbide (SiC) power MOSFET device manufacturing technology has resulted in their wider commercial availability with different voltage and current ratings and from various manufacturers. Hence, it is essential to perform characterisation of its intrinsic body diode. This paper presents the reliability assessment of body diodes of latest generation discrete SiC power MOSFETs within a 3-phase 2-level DC-to-AC inverter representing realistic operating conditions for power electronic applications. Elsevier 2016-09-30 Article PeerReviewed Fayyaz, A., Romano, G. and Castellazzi, Alberto (2016) Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64 . pp. 530-534. ISSN 0026-2714 Silicon carbide; Wide bandgap; Power MOSFET; Body diode; Reliability http://www.sciencedirect.com/science/article/pii/S0026271416301883 doi:10.1016/j.microrel.2016.07.044 doi:10.1016/j.microrel.2016.07.044 |
| spellingShingle | Silicon carbide; Wide bandgap; Power MOSFET; Body diode; Reliability Fayyaz, A. Romano, G. Castellazzi, Alberto Body diode reliability investigation of SiC power MOSFETs |
| title | Body diode reliability investigation of SiC power MOSFETs |
| title_full | Body diode reliability investigation of SiC power MOSFETs |
| title_fullStr | Body diode reliability investigation of SiC power MOSFETs |
| title_full_unstemmed | Body diode reliability investigation of SiC power MOSFETs |
| title_short | Body diode reliability investigation of SiC power MOSFETs |
| title_sort | body diode reliability investigation of sic power mosfets |
| topic | Silicon carbide; Wide bandgap; Power MOSFET; Body diode; Reliability |
| url | https://eprints.nottingham.ac.uk/38669/ https://eprints.nottingham.ac.uk/38669/ https://eprints.nottingham.ac.uk/38669/ |