Low inductance 2.5kV packaging technology for SiC switches

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Low inductance 2.5kV packaging technology for SiC switches

The switching speed of power semiconductors has reached levels where conventional semiconductors packages limit the achievable performance due to relatively high parasitic inductance and capacitance. This paper presents a novel packaging structure which employs stacked substrate and flexible printed...

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Bibliographic Details
Main Authors:	Mouawad, Bassem, Li, Jianfeng, Castellazzi, Alberto, Johnson, Christopher Mark, Erlbacher, Tobias, Friedriches, Peter
Format:	Conference or Workshop Item
Published:	2016
Online Access:	https://eprints.nottingham.ac.uk/37318/

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