Low inductance 2.5kV packaging technology for SiC switches
The switching speed of power semiconductors has reached levels where conventional semiconductors packages limit the achievable performance due to relatively high parasitic inductance and capacitance. This paper presents a novel packaging structure which employs stacked substrate and flexible printed...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2016
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| Online Access: | https://eprints.nottingham.ac.uk/37318/ |
| _version_ | 1848795433923510272 |
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| author | Mouawad, Bassem Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark Erlbacher, Tobias Friedriches, Peter |
| author_facet | Mouawad, Bassem Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark Erlbacher, Tobias Friedriches, Peter |
| author_sort | Mouawad, Bassem |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The switching speed of power semiconductors has reached levels where conventional semiconductors packages limit the achievable performance due to relatively high parasitic inductance and capacitance. This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to ac¬commodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low in¬ductance values of the major loops. Due to delay delivery of those custom ordered substrate and PCB, the prototyping samples of the designed module have yet been constructed. The up to date results including experimental construction, electrical and thermal performance of the samples will be presented at the conference. |
| first_indexed | 2025-11-14T19:32:01Z |
| format | Conference or Workshop Item |
| id | nottingham-37318 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:32:01Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-373182020-05-04T20:05:33Z https://eprints.nottingham.ac.uk/37318/ Low inductance 2.5kV packaging technology for SiC switches Mouawad, Bassem Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark Erlbacher, Tobias Friedriches, Peter The switching speed of power semiconductors has reached levels where conventional semiconductors packages limit the achievable performance due to relatively high parasitic inductance and capacitance. This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to ac¬commodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low in¬ductance values of the major loops. Due to delay delivery of those custom ordered substrate and PCB, the prototyping samples of the designed module have yet been constructed. The up to date results including experimental construction, electrical and thermal performance of the samples will be presented at the conference. 2016 Conference or Workshop Item PeerReviewed Mouawad, Bassem, Li, Jianfeng, Castellazzi, Alberto, Johnson, Christopher Mark, Erlbacher, Tobias and Friedriches, Peter (2016) Low inductance 2.5kV packaging technology for SiC switches. In: 9th International Conference on Integrated Power Electronics Systems, 08-10 Mar 2016, Nuremberg, Germany. |
| spellingShingle | Mouawad, Bassem Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark Erlbacher, Tobias Friedriches, Peter Low inductance 2.5kV packaging technology for SiC switches |
| title | Low inductance 2.5kV packaging technology for SiC switches |
| title_full | Low inductance 2.5kV packaging technology for SiC switches |
| title_fullStr | Low inductance 2.5kV packaging technology for SiC switches |
| title_full_unstemmed | Low inductance 2.5kV packaging technology for SiC switches |
| title_short | Low inductance 2.5kV packaging technology for SiC switches |
| title_sort | low inductance 2.5kv packaging technology for sic switches |
| url | https://eprints.nottingham.ac.uk/37318/ |