Low parasitic inductance multi-chip SiC devices packaging technology
This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to a...
| Main Authors: | , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
2016
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/37316/ |
| _version_ | 1848795433299607552 |
|---|---|
| author | Li, Jianfeng Mouawad, Bassem Castellazzi, Alberto Friedrichs, Peter Johnson, Christopher Mark |
| author_facet | Li, Jianfeng Mouawad, Bassem Castellazzi, Alberto Friedrichs, Peter Johnson, Christopher Mark |
| author_sort | Li, Jianfeng |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to accommodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low inductance values of the major loops. Then the prototyping of the designed package including the assembly process, all the electrical test to evaluate the electrical performance are presented. |
| first_indexed | 2025-11-14T19:32:00Z |
| format | Conference or Workshop Item |
| id | nottingham-37316 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:32:00Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-373162020-05-04T17:34:33Z https://eprints.nottingham.ac.uk/37316/ Low parasitic inductance multi-chip SiC devices packaging technology Li, Jianfeng Mouawad, Bassem Castellazzi, Alberto Friedrichs, Peter Johnson, Christopher Mark This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to accommodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low inductance values of the major loops. Then the prototyping of the designed package including the assembly process, all the electrical test to evaluate the electrical performance are presented. 2016-03-01 Conference or Workshop Item PeerReviewed Li, Jianfeng, Mouawad, Bassem, Castellazzi, Alberto, Friedrichs, Peter and Johnson, Christopher Mark (2016) Low parasitic inductance multi-chip SiC devices packaging technology. In: 18th European Conference on Power Electronics and Applications, 5-9 September 2016, Karlsruhe, Germany. Wide bandgap devices High frequency power converter Silicon Carbide (SiC) Packaging high voltage power converters JFET Wind energy |
| spellingShingle | Wide bandgap devices High frequency power converter Silicon Carbide (SiC) Packaging high voltage power converters JFET Wind energy Li, Jianfeng Mouawad, Bassem Castellazzi, Alberto Friedrichs, Peter Johnson, Christopher Mark Low parasitic inductance multi-chip SiC devices packaging technology |
| title | Low parasitic inductance multi-chip SiC devices packaging technology |
| title_full | Low parasitic inductance multi-chip SiC devices packaging technology |
| title_fullStr | Low parasitic inductance multi-chip SiC devices packaging technology |
| title_full_unstemmed | Low parasitic inductance multi-chip SiC devices packaging technology |
| title_short | Low parasitic inductance multi-chip SiC devices packaging technology |
| title_sort | low parasitic inductance multi-chip sic devices packaging technology |
| topic | Wide bandgap devices High frequency power converter Silicon Carbide (SiC) Packaging high voltage power converters JFET Wind energy |
| url | https://eprints.nottingham.ac.uk/37316/ |