Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance

We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication t...

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Main Authors: Tokaç, M., Wang, M., Jaiswal, Shashank, Rushforth, A.W., Gallagher, B.L., Atkinson, D., Hindmarch, A.T.
Format: Article
Published: AIP Publishing 2015
Online Access:https://eprints.nottingham.ac.uk/37055/
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author Tokaç, M.
Wang, M.
Jaiswal, Shashank
Rushforth, A.W.
Gallagher, B.L.
Atkinson, D.
Hindmarch, A.T.
author_facet Tokaç, M.
Wang, M.
Jaiswal, Shashank
Rushforth, A.W.
Gallagher, B.L.
Atkinson, D.
Hindmarch, A.T.
author_sort Tokaç, M.
building Nottingham Research Data Repository
collection Online Access
description We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobalt film thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.
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institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T19:31:13Z
publishDate 2015
publisher AIP Publishing
recordtype eprints
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spelling nottingham-370552020-05-04T17:28:04Z https://eprints.nottingham.ac.uk/37055/ Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance Tokaç, M. Wang, M. Jaiswal, Shashank Rushforth, A.W. Gallagher, B.L. Atkinson, D. Hindmarch, A.T. We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobalt film thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films. AIP Publishing 2015-12-07 Article PeerReviewed Tokaç, M., Wang, M., Jaiswal, Shashank, Rushforth, A.W., Gallagher, B.L., Atkinson, D. and Hindmarch, A.T. (2015) Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance. AIP Advances, 5 . 127108/1-127108/7. ISSN 2158-3226 http://scitation.aip.org/content/aip/journal/adva/5/12/10.1063/1.4937556 doi:10.1063/1.4937556 doi:10.1063/1.4937556
spellingShingle Tokaç, M.
Wang, M.
Jaiswal, Shashank
Rushforth, A.W.
Gallagher, B.L.
Atkinson, D.
Hindmarch, A.T.
Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance
title Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance
title_full Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance
title_fullStr Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance
title_full_unstemmed Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance
title_short Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance
title_sort interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance
url https://eprints.nottingham.ac.uk/37055/
https://eprints.nottingham.ac.uk/37055/
https://eprints.nottingham.ac.uk/37055/