Suitable thicknesses of base metal and interlayer, and evolution of phases for Ag/Sn/Ag transient liquid-phase joints used for power die attachment
Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure cha...
| Main Authors: | , , |
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| Format: | Article |
| Published: |
Springer
2014
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/36300/ |