Intrinsic magnetic refrigeration of a single electron transistor

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Intrinsic magnetic refrigeration of a single electron transistor

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique an...

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Bibliographic Details
Main Authors:	Ciccarelli, C., Campion, R.P., Gallagher, B.L., Ferguson, A.J.
Format:	Article
Published:	American Institute of Physics 2016
Online Access:	https://eprints.nottingham.ac.uk/35760/

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