Intrinsic magnetic refrigeration of a single electron transistor
In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique an...
| Main Authors: | , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2016
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| Online Access: | https://eprints.nottingham.ac.uk/35760/ |