Intrinsic magnetic refrigeration of a single electron transistor
In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique an...
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| Format: | Article |
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American Institute of Physics
2016
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| Online Access: | https://eprints.nottingham.ac.uk/35760/ |
| _version_ | 1848795155595788288 |
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| author | Ciccarelli, C. Campion, R.P. Gallagher, B.L. Ferguson, A.J. |
| author_facet | Ciccarelli, C. Campion, R.P. Gallagher, B.L. Ferguson, A.J. |
| author_sort | Ciccarelli, C. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments. |
| first_indexed | 2025-11-14T19:27:36Z |
| format | Article |
| id | nottingham-35760 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:27:36Z |
| publishDate | 2016 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-357602020-05-04T17:38:08Z https://eprints.nottingham.ac.uk/35760/ Intrinsic magnetic refrigeration of a single electron transistor Ciccarelli, C. Campion, R.P. Gallagher, B.L. Ferguson, A.J. In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments. American Institute of Physics 2016-02-03 Article PeerReviewed Ciccarelli, C., Campion, R.P., Gallagher, B.L. and Ferguson, A.J. (2016) Intrinsic magnetic refrigeration of a single electron transistor. Applied Physics Letters, 108 (5). 053103/1-053103/4. ISSN 1077-3118 http://scitation.aip.org/content/aip/journal/apl/108/5/10.1063/1.4941289 doi:10.1063/1.4941289 doi:10.1063/1.4941289 |
| spellingShingle | Ciccarelli, C. Campion, R.P. Gallagher, B.L. Ferguson, A.J. Intrinsic magnetic refrigeration of a single electron transistor |
| title | Intrinsic magnetic refrigeration of a single electron transistor |
| title_full | Intrinsic magnetic refrigeration of a single electron transistor |
| title_fullStr | Intrinsic magnetic refrigeration of a single electron transistor |
| title_full_unstemmed | Intrinsic magnetic refrigeration of a single electron transistor |
| title_short | Intrinsic magnetic refrigeration of a single electron transistor |
| title_sort | intrinsic magnetic refrigeration of a single electron transistor |
| url | https://eprints.nottingham.ac.uk/35760/ https://eprints.nottingham.ac.uk/35760/ https://eprints.nottingham.ac.uk/35760/ |