Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source

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Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source

The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra–violet light source for surface decontamination and water purification. In this paper we will describe our recent results on plasma-assist...

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Bibliographic Details
Main Authors:	Novikov, Sergei V., Staddon, Christopher R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J., Foxon, C.T.
Format:	Article
Published:	Elsevier 2016
Subjects:	A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Online Access:	https://eprints.nottingham.ac.uk/35729/

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