Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source
The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra–violet light source for surface decontamination and water purification. In this paper we will describe our recent results on plasma-assist...
| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/35729/ |