Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source
The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra–violet light source for surface decontamination and water purification. In this paper we will describe our recent results on plasma-assist...
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| Format: | Article |
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Elsevier
2016
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| Online Access: | https://eprints.nottingham.ac.uk/35729/ |
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| author | Novikov, Sergei V. Staddon, Christopher R. Sahonta, S-L Oliver, R.A. Humphreys, C.J. Foxon, C.T. |
| author_facet | Novikov, Sergei V. Staddon, Christopher R. Sahonta, S-L Oliver, R.A. Humphreys, C.J. Foxon, C.T. |
| author_sort | Novikov, Sergei V. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra–violet light source for surface decontamination and water purification. In this paper we will describe our recent results on plasma-assisted molecular beam epitaxy (PA-MBE) growth of free-standing wurtzite AlxGa1−xN bulk crystals using the latest model of Riber's highly efficient nitrogen RF plasma source. We have achieved AlGaN growth rates up to 3 µm/h. Wurtzite AlxGa1−xN layers with thicknesses up to 100 μm were successfully grown by PA-MBE on 2-inch and 3-inch GaAs (111)B substrates. After growth the GaAs was subsequently removed using a chemical etch to achieve free-standing AlxGa1−xN wafers. Free-standing bulk AlxGa1−xN wafers with thicknesses in the range 30–100 μm may be used as substrates for further growth of AlxGa1−xN-based structures and devices. High Resolution Scanning Transmission Electron Microscopy (HR-STEM) and Convergent Beam Electron Diffraction (CBED) were employed for detailed structural analysis of AlGaN/GaAs (111)B interface and allowed us to determine the N-polarity of AlGaN layers grown on GaAs (111)B substrates. The novel, high efficiency RF plasma source allowed us to achieve free-standing AlxGa1−xN layers in a single day's growth, making this a commercially viable process. |
| first_indexed | 2025-11-14T19:27:29Z |
| format | Article |
| id | nottingham-35729 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:27:29Z |
| publishDate | 2016 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-357292020-05-04T17:59:28Z https://eprints.nottingham.ac.uk/35729/ Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source Novikov, Sergei V. Staddon, Christopher R. Sahonta, S-L Oliver, R.A. Humphreys, C.J. Foxon, C.T. The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra–violet light source for surface decontamination and water purification. In this paper we will describe our recent results on plasma-assisted molecular beam epitaxy (PA-MBE) growth of free-standing wurtzite AlxGa1−xN bulk crystals using the latest model of Riber's highly efficient nitrogen RF plasma source. We have achieved AlGaN growth rates up to 3 µm/h. Wurtzite AlxGa1−xN layers with thicknesses up to 100 μm were successfully grown by PA-MBE on 2-inch and 3-inch GaAs (111)B substrates. After growth the GaAs was subsequently removed using a chemical etch to achieve free-standing AlxGa1−xN wafers. Free-standing bulk AlxGa1−xN wafers with thicknesses in the range 30–100 μm may be used as substrates for further growth of AlxGa1−xN-based structures and devices. High Resolution Scanning Transmission Electron Microscopy (HR-STEM) and Convergent Beam Electron Diffraction (CBED) were employed for detailed structural analysis of AlGaN/GaAs (111)B interface and allowed us to determine the N-polarity of AlGaN layers grown on GaAs (111)B substrates. The novel, high efficiency RF plasma source allowed us to achieve free-standing AlxGa1−xN layers in a single day's growth, making this a commercially viable process. Elsevier 2016-07-27 Article PeerReviewed Novikov, Sergei V., Staddon, Christopher R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J. and Foxon, C.T. (2016) Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth . ISSN 0022-0248 A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials http://dx.doi.org/10.1016/j.jcrysgro.2016.07.038 10.1016/j.jcrysgro.2016.07.038 10.1016/j.jcrysgro.2016.07.038 10.1016/j.jcrysgro.2016.07.038 |
| spellingShingle | A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials Novikov, Sergei V. Staddon, Christopher R. Sahonta, S-L Oliver, R.A. Humphreys, C.J. Foxon, C.T. Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source |
| title | Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source |
| title_full | Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source |
| title_fullStr | Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source |
| title_full_unstemmed | Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source |
| title_short | Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source |
| title_sort | growth of free-standing bulk wurtzite alxga1−xn layers by molecular beam epitaxy using a highly efficient rf plasma source |
| topic | A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials |
| url | https://eprints.nottingham.ac.uk/35729/ https://eprints.nottingham.ac.uk/35729/ https://eprints.nottingham.ac.uk/35729/ |