Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals ave already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes...
| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Article |
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Macmillan Publishers Limited
2014
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| Online Access: | https://eprints.nottingham.ac.uk/35688/ |
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| author | Mishchenko, A. Tu, J.S. Cao, Y. Gorbachev, R.V. Wallbank, J.R. Greenaway, M.T. Morozov, S.V. Morozov, V.E. Zhu, M.J. Wong, S.L. Withers, F. Woods, C.R. Kim, Y.-J. Watanabe, Kenji Taniguchi, Takashi Vdovin, Evgeny E. Makarovsky, Oleg Fromhold, T.M. Fal'ko, V.I. Geim, A.K. Eaves, Laurence Novoselov, K.S. |
| author_facet | Mishchenko, A. Tu, J.S. Cao, Y. Gorbachev, R.V. Wallbank, J.R. Greenaway, M.T. Morozov, S.V. Morozov, V.E. Zhu, M.J. Wong, S.L. Withers, F. Woods, C.R. Kim, Y.-J. Watanabe, Kenji Taniguchi, Takashi Vdovin, Evgeny E. Makarovsky, Oleg Fromhold, T.M. Fal'ko, V.I. Geim, A.K. Eaves, Laurence Novoselov, K.S. |
| author_sort | Mishchenko, A. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals ave already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology. |
| first_indexed | 2025-11-14T19:27:20Z |
| format | Article |
| id | nottingham-35688 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:27:20Z |
| publishDate | 2014 |
| publisher | Macmillan Publishers Limited |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-356882020-05-04T16:54:30Z https://eprints.nottingham.ac.uk/35688/ Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures Mishchenko, A. Tu, J.S. Cao, Y. Gorbachev, R.V. Wallbank, J.R. Greenaway, M.T. Morozov, S.V. Morozov, V.E. Zhu, M.J. Wong, S.L. Withers, F. Woods, C.R. Kim, Y.-J. Watanabe, Kenji Taniguchi, Takashi Vdovin, Evgeny E. Makarovsky, Oleg Fromhold, T.M. Fal'ko, V.I. Geim, A.K. Eaves, Laurence Novoselov, K.S. Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals ave already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology. Macmillan Publishers Limited 2014-09-07 Article PeerReviewed Mishchenko, A., Tu, J.S., Cao, Y., Gorbachev, R.V., Wallbank, J.R., Greenaway, M.T., Morozov, S.V., Morozov, V.E., Zhu, M.J., Wong, S.L., Withers, F., Woods, C.R., Kim, Y.-J., Watanabe, Kenji, Taniguchi, Takashi, Vdovin, Evgeny E., Makarovsky, Oleg, Fromhold, T.M., Fal'ko, V.I., Geim, A.K., Eaves, Laurence and Novoselov, K.S. (2014) Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nature Nanotechnology, 9 . pp. 808-813. ISSN 1748-3395 Electronic and spintronic devices; Electronic properties and materials http://www.nature.com/nnano/journal/v9/n10/full/nnano.2014.187.html doi:10.1038/NNANO.2014.187 doi:10.1038/NNANO.2014.187 |
| spellingShingle | Electronic and spintronic devices; Electronic properties and materials Mishchenko, A. Tu, J.S. Cao, Y. Gorbachev, R.V. Wallbank, J.R. Greenaway, M.T. Morozov, S.V. Morozov, V.E. Zhu, M.J. Wong, S.L. Withers, F. Woods, C.R. Kim, Y.-J. Watanabe, Kenji Taniguchi, Takashi Vdovin, Evgeny E. Makarovsky, Oleg Fromhold, T.M. Fal'ko, V.I. Geim, A.K. Eaves, Laurence Novoselov, K.S. Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures |
| title | Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures |
| title_full | Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures |
| title_fullStr | Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures |
| title_full_unstemmed | Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures |
| title_short | Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures |
| title_sort | twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures |
| topic | Electronic and spintronic devices; Electronic properties and materials |
| url | https://eprints.nottingham.ac.uk/35688/ https://eprints.nottingham.ac.uk/35688/ https://eprints.nottingham.ac.uk/35688/ |