Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals ave already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes...

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Bibliographic Details
Main Authors: Mishchenko, A., Tu, J.S., Cao, Y., Gorbachev, R.V., Wallbank, J.R., Greenaway, M.T., Morozov, S.V., Morozov, V.E., Zhu, M.J., Wong, S.L., Withers, F., Woods, C.R., Kim, Y.-J., Watanabe, Kenji, Taniguchi, Takashi, Vdovin, Evgeny E., Makarovsky, Oleg, Fromhold, T.M., Fal'ko, V.I., Geim, A.K., Eaves, Laurence, Novoselov, K.S.
Format: Article
Published: Macmillan Publishers Limited 2014
Subjects:
Electronic and spintronic devices; Electronic properties and materials
Online Access:https://eprints.nottingham.ac.uk/35688/

Internet

https://eprints.nottingham.ac.uk/35688/

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