Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

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Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and a...

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Bibliographic Details
Main Authors:	Fayyaz, A., Yang, L., Riccio, M., Castellazzi, Alberto, Irace, A.
Format:	Article
Published:	Elsevier 2014
Subjects:	SiC; Power MOSFETs; Wide bandgap; Device characterisation; Reliability; Robustness
Online Access:	https://eprints.nottingham.ac.uk/35685/

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