Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and a...
| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
Elsevier
2014
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/35685/ |