Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and a...
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| Format: | Article |
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Elsevier
2014
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| Online Access: | https://eprints.nottingham.ac.uk/35685/ |
| _version_ | 1848795138140143616 |
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| author | Fayyaz, A. Yang, L. Riccio, M. Castellazzi, Alberto Irace, A. |
| author_facet | Fayyaz, A. Yang, L. Riccio, M. Castellazzi, Alberto Irace, A. |
| author_sort | Fayyaz, A. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their aging under repetitive stress conditions. Both a functional and a structural characterisation of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development. |
| first_indexed | 2025-11-14T19:27:19Z |
| format | Article |
| id | nottingham-35685 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:27:19Z |
| publishDate | 2014 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-356852020-05-04T16:52:57Z https://eprints.nottingham.ac.uk/35685/ Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs Fayyaz, A. Yang, L. Riccio, M. Castellazzi, Alberto Irace, A. This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their aging under repetitive stress conditions. Both a functional and a structural characterisation of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development. Elsevier 2014-10-01 Article PeerReviewed Fayyaz, A., Yang, L., Riccio, M., Castellazzi, Alberto and Irace, A. (2014) Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54 (9-10). pp. 2185-2190. ISSN 0026-2714 SiC; Power MOSFETs; Wide bandgap; Device characterisation; Reliability; Robustness http://www.sciencedirect.com/science/article/pii/S0026271414002741 doi:10.1016/j.microrel.2014.07.078 doi:10.1016/j.microrel.2014.07.078 |
| spellingShingle | SiC; Power MOSFETs; Wide bandgap; Device characterisation; Reliability; Robustness Fayyaz, A. Yang, L. Riccio, M. Castellazzi, Alberto Irace, A. Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs |
| title | Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs |
| title_full | Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs |
| title_fullStr | Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs |
| title_full_unstemmed | Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs |
| title_short | Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs |
| title_sort | single pulse avalanche robustness and repetitive stress ageing of sic power mosfets |
| topic | SiC; Power MOSFETs; Wide bandgap; Device characterisation; Reliability; Robustness |
| url | https://eprints.nottingham.ac.uk/35685/ https://eprints.nottingham.ac.uk/35685/ https://eprints.nottingham.ac.uk/35685/ |