High temperature pulsed-gate robustness testing of SiC power MOSFETs

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High temperature pulsed-gate robustness testing of SiC power MOSFETs

Silicon Carbide (SiC) gate oxide reliability still remains a crucial issue and is amongst the important consideration factors when it comes to the implementation of SiC MOS-based devices within industrial power electronic applications. Recent studies have emerged assessing the gate oxide reliability...

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Bibliographic Details
Main Authors:	Fayyaz, A., Castellazzi, A.
Format:	Article
Published:	Elsevier 2015
Subjects:	SiC; Power MOSFETs; Gate-oxide reliability; Robustness; Wide bandgap; SiC/SiO2 interface
Online Access:	https://eprints.nottingham.ac.uk/35663/

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