High temperature pulsed-gate robustness testing of SiC power MOSFETs
Silicon Carbide (SiC) gate oxide reliability still remains a crucial issue and is amongst the important consideration factors when it comes to the implementation of SiC MOS-based devices within industrial power electronic applications. Recent studies have emerged assessing the gate oxide reliability...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Published: |
Elsevier
2015
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/35663/ |