Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify h...
| Main Authors: | , , , , , , |
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| Format: | Article |
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American Institute of Physics
2015
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| Online Access: | https://eprints.nottingham.ac.uk/35047/ |
| _version_ | 1848794991028076544 |
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| author | Gaskell, Jennifer Eaves, Laurence Novoselov, K.S. Mishchenko, A. Geim, A.K. Fromhold, T.M. Greenaway, M.T. |
| author_facet | Gaskell, Jennifer Eaves, Laurence Novoselov, K.S. Mishchenko, A. Geim, A.K. Fromhold, T.M. Greenaway, M.T. |
| author_sort | Gaskell, Jennifer |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable. |
| first_indexed | 2025-11-14T19:24:59Z |
| format | Article |
| id | nottingham-35047 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:24:59Z |
| publishDate | 2015 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-350472020-05-04T17:17:28Z https://eprints.nottingham.ac.uk/35047/ Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators Gaskell, Jennifer Eaves, Laurence Novoselov, K.S. Mishchenko, A. Geim, A.K. Fromhold, T.M. Greenaway, M.T. We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable. American Institute of Physics 2015-09-09 Article PeerReviewed Gaskell, Jennifer, Eaves, Laurence, Novoselov, K.S., Mishchenko, A., Geim, A.K., Fromhold, T.M. and Greenaway, M.T. (2015) Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators. Applied Physics Letters, 107 (10). 103105/1-103105/4. ISSN 1077-3118 http://scitation.aip.org/content/aip/journal/apl/107/10/10.1063/1.4930230 doi:10.1063/1.4930230 doi:10.1063/1.4930230 |
| spellingShingle | Gaskell, Jennifer Eaves, Laurence Novoselov, K.S. Mishchenko, A. Geim, A.K. Fromhold, T.M. Greenaway, M.T. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators |
| title | Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators |
| title_full | Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators |
| title_fullStr | Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators |
| title_full_unstemmed | Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators |
| title_short | Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators |
| title_sort | graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators |
| url | https://eprints.nottingham.ac.uk/35047/ https://eprints.nottingham.ac.uk/35047/ https://eprints.nottingham.ac.uk/35047/ |