Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify h...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2015
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| Online Access: | https://eprints.nottingham.ac.uk/35047/ |