Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter
In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contribu...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2016
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| Online Access: | https://eprints.nottingham.ac.uk/35035/ |
| _version_ | 1848794987943165952 |
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| author | Gurpinar, Emre Castellazzi, Alberto Iannuzzo, Francesco Yang, Yongheng Blaabjerg, Frede |
| author_facet | Gurpinar, Emre Castellazzi, Alberto Iannuzzo, Francesco Yang, Yongheng Blaabjerg, Frede |
| author_sort | Gurpinar, Emre |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance. |
| first_indexed | 2025-11-14T19:24:56Z |
| format | Conference or Workshop Item |
| id | nottingham-35035 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:24:56Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-350352020-05-04T17:43:32Z https://eprints.nottingham.ac.uk/35035/ Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter Gurpinar, Emre Castellazzi, Alberto Iannuzzo, Francesco Yang, Yongheng Blaabjerg, Frede In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance. 2016-05-01 Conference or Workshop Item PeerReviewed Gurpinar, Emre, Castellazzi, Alberto, Iannuzzo, Francesco, Yang, Yongheng and Blaabjerg, Frede (2016) Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter. In: IEEE Energy Conversion Congress & Expo (ECCE 2016), 18-22 Sept 2016, Milwaukee, Wisconsin, USA. (In Press) Wide Bandgap (WBG) Power Devices Gallium-Nitride (GaN) HEMT Three-Level Active Neutral Point Clamped (3L-ANPC) Converter Photovoltaic (PV) Systems |
| spellingShingle | Wide Bandgap (WBG) Power Devices Gallium-Nitride (GaN) HEMT Three-Level Active Neutral Point Clamped (3L-ANPC) Converter Photovoltaic (PV) Systems Gurpinar, Emre Castellazzi, Alberto Iannuzzo, Francesco Yang, Yongheng Blaabjerg, Frede Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter |
| title | Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter |
| title_full | Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter |
| title_fullStr | Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter |
| title_full_unstemmed | Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter |
| title_short | Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter |
| title_sort | ultra-low inductance design for a gan hemt based 3l-anpc inverter |
| topic | Wide Bandgap (WBG) Power Devices Gallium-Nitride (GaN) HEMT Three-Level Active Neutral Point Clamped (3L-ANPC) Converter Photovoltaic (PV) Systems |
| url | https://eprints.nottingham.ac.uk/35035/ |