Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter
In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contribu...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/35035/ |