Overload robust IGBT design for SSCB application

This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurre...

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Main Authors: Supono, I., Urresti, J., Castellazzi, Alberto, Flores, D.
Format: Article
Published: Elsevier 2014
Subjects:
Online Access:https://eprints.nottingham.ac.uk/35023/
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author Supono, I.
Urresti, J.
Castellazzi, Alberto
Flores, D.
author_facet Supono, I.
Urresti, J.
Castellazzi, Alberto
Flores, D.
author_sort Supono, I.
building Nottingham Research Data Repository
collection Online Access
description This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and short-circuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current.
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spelling nottingham-350232020-05-04T16:52:32Z https://eprints.nottingham.ac.uk/35023/ Overload robust IGBT design for SSCB application Supono, I. Urresti, J. Castellazzi, Alberto Flores, D. This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and short-circuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current. Elsevier 2014-08-13 Article PeerReviewed Supono, I., Urresti, J., Castellazzi, Alberto and Flores, D. (2014) Overload robust IGBT design for SSCB application. Microelectronics Reliability, 54 (9/10). pp. 1906-1910. ISSN 0026-2714 Robust; Power device; IGBT; SSCB http://www.sciencedirect.com/science/article/pii/S0026271414003485 doi:10.1016/j.microrel.2014.07.146 doi:10.1016/j.microrel.2014.07.146
spellingShingle Robust; Power device; IGBT; SSCB
Supono, I.
Urresti, J.
Castellazzi, Alberto
Flores, D.
Overload robust IGBT design for SSCB application
title Overload robust IGBT design for SSCB application
title_full Overload robust IGBT design for SSCB application
title_fullStr Overload robust IGBT design for SSCB application
title_full_unstemmed Overload robust IGBT design for SSCB application
title_short Overload robust IGBT design for SSCB application
title_sort overload robust igbt design for sscb application
topic Robust; Power device; IGBT; SSCB
url https://eprints.nottingham.ac.uk/35023/
https://eprints.nottingham.ac.uk/35023/
https://eprints.nottingham.ac.uk/35023/