Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm−3 is achieved which allows a specific contact resistance of 1.3×10−4 Ω cm2. An increased gallium beam equivalent p...

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Bibliographic Details
Main Authors: Qian, H., Lee, K.B., Vajargah, S.Hosseini, Novikov, S.V., Guiney, I., Zhang, S., Zaidi, Z.H., Jiang, S., Wallis, D.J., Foxon, C.T., Humphreys, C.J., Houston, P.A.
Format: Article
Published: IOP Publishing 2016
Subjects:
GaN
PN diode
conduction mechanism
p-type doping
amorphous GaNAs
Online Access:https://eprints.nottingham.ac.uk/34804/

Internet

https://eprints.nottingham.ac.uk/34804/

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