Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

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Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model...

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Bibliographic Details
Main Authors:	Segercrantz, N., Yu, K.M., Ting, M., Sarney, W.L., Svensson, S.P., Novikov, S.V., Foxon, C.T., Walukiewicz, W.
Format:	Article
Language:	English
Published:	American Institute of Physics 2015
Online Access:	https://eprints.nottingham.ac.uk/34755/

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