Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

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Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capa...

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Bibliographic Details
Main Authors:	Bansal, Kanika, Henini, M., Alshammari, Marzook S., Datta, Shouvik
Format:	Article
Published:	American Institute of Physics 2014
Online Access:	https://eprints.nottingham.ac.uk/34555/

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